WebAug 30, 2024 · Manufacturing SiC substrates are complex, which accounts for the high cost. SiC crystal formation is 100 to 200 times slower than Si crystal growth. Si crystal rods … WebJan 21, 2006 · Silicon carbide (SiC) is a promising material for the device operating in hash environment, such as high temperature, high pressure or erodent environment, owning to its excellent electrical, mechanical, and chemical properties. The PECVD process allows deposition of SiC at low temperature (200degC-400degC), which makes SiC has better …
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